He Ions for 3D Imaging
نویسنده
چکیده
A theoretical model of He ion imaging for acquisition of a stack of image slices with applications in 3D tomography previously showed that ion implantation accumulates with each image scan [1]. The accumulated ion implantation can result in damage to the target depending on image dose per slice and slice thickness. The imaging ion energy and incidence angle will also influence the accumulated ion implantation distribution for a specific target.
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